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2005, 11

M. Kandouci, S. Mottet, C. Kandouci

A model for the conduction in polycrystalline silicon thin film transistors

language: English

received 29.11.2004, published 29.04.2005

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ABSTRACT

The aim of this paper is the analysis, prediction and optimisation of polysilicon thin film transistors (TFTs) in both « on » and « off » states. We have established a physical model which accounts for the grain, the grain surface and grain boundaries. The conduction mechanisms and the exchange between electron and hole populations are explicitly considered. Field effects are included through the influence of carrier velocity saturation, impact ionisation and interband tunnel effect. A fair agreement between experimental characteristics and simulated results is obtained, and the simulations allow a good insight into the main mechanisms controlling the TFT operation modes.

Keywords: Polysilicon, dangling bonds, band tail states, TFT, simulation, generation-recombination, impact ionisation, interband tunnel effect

16 pages, 12 figures

Сitation: M. Kandouci, S. Mottet, C. Kandouci. A model for the conduction in polycrystalline silicon thin film transistors. Electronic Journal “Technical Acoustics”, http://www.ejta.org, 2005, 11.

REFERENCES

[1] M. Kandouci, S. Mottet. Modelling and optimisation of Si poly TFTs for flat panel displays. Polyse 93 Polycrystalline Semiconductors 3, Physics and Technology, Solid State Phenomena, 1994, vol. 37–38, Scitec Publications, Switzerland, 571–576.
[2] W. Shockley, W. T. Read. Statistics of the recombinations of holes and electrons. Physical Revue b, 1952, vol. 87, N°5, 835–842.
[3] J. E. Viallet, S. Mottet. Transient simulation of heterostructure. Proceedings of Nasecode 4 Conf., Boole Press, 1985, 536–541.
[4] G. Baccarani, M. Rudan, R. Guerrieri, P. Ciampolini. Physical models for numerical device simulation. Process and Device Modeling, 1986, vol. 1, North-Holland, 107–158.
[5] B. Ah Khan, R. Pandya. Activation energy of source-drain current in hydrogenated polysilicon thin film transistors. IEEE Trans. Electron Devices, 1990, vol. 37, N°7, July.
[6] J. S. Blakemore. International series of monographs on semiconductors. Editor Heinz K. Henish, University of Reading, 1962, vol. 3.
[7] J. Hubin, A. V. Shah, E. Sauvin. Effects of dangling bonds on the recombination function in amorphous semiconductors. Philosophical Magazine Letters, 1992, vol. 66, N°3, 115–125.
[8] S. Mottet, J. E. Viallet. Thermionic emission in semiconductors. SISDEP, 1988, vol. 3, Ed. G. Baccarani, M. Rudan, Bologna (Italy), 97–108.
[9] C. Simon, S. Mottet, J. E. Viallet. Autoadaptative Mesh Refinement. SISDEP, 1991, vol. 4, Ed. W. Fichner, D. Aemmer (Hartung-Gorre), 225–233.
[10] J. Oualid, H. Amzil, J. R Crest, J. Dugas, G. Mathian, M. Zehaf, S. Martinuzzi. Propriétés électroniques des joints de grains dans le silicium polycristallin. Journal de Physique, Colloque Cl, supplément au, 1982, Octobre, tome 43, N°10, 313–318.
[11] M. Kandouci. Modélisation des transistors en couches minces au silicium polycristallin petits grains en régimes passant et bloquant. Thèse de l'Université de Rennes 1, N°979, Juin, 1993.
[12] A. Schenk. Rigorous theory and simplified model of the band to band tunneling in silicon. Solid-State Electronics, 1993, vol. 36, N°1, 19–34.
[13] S. M. Sze. Physics of semiconductors devices. Wiley Intersciences Publications, Second Edition, 1981.
[14] M. Kandouci, S. Mottet, C. Kandouci, Z. Kari. Modelling and optimisation of Si Poly TFT’s for flat panel displays. SNS’02, du 15 au 17 décembre 2002, Saida, Algérie.
[15] M. Bonnel, N. Duhamel, M. Kandouci, B. Loisel, Y. Pelous. Si Poly TFT's with low off-current for fiat panel displays. Proceedings of Eurodisplay'93, Strasbourg (F), 1993, Sept, 199–202.
[16] M. Kandouci, C. Kandouci, Z. Kari. Origin of current in TFT’s. ELECOM’04, Saida, Algérie, 2004.


 

Malika Kandouci received the B.S. and the M.S. degrees in electronics from Sidi Bel Abbès Institute of Physics, in 1982 and 1986, respectively. She received her PhD degree in physics of semiconductors in 1993 from Rennes I University of France. From 1994 to 1997 she worked at CNET (Center National of Studies on Telecommunication) Lannion in KEOPS project. Presently she is professor at Sidi Bel-Abbes University, Algeria.

e-mail: maikand04(at)yahoo.fr

 
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S. Mottet an Ingineer of ENSMA in 1971, PhD in 1977. From 1981 to 1998 he was charged of modeling at ICM division of CNET (Center National of Studies on Telecommunication) Lannion, France. Since 1990 he is currently professor at ENSSAT (Ecole Nationale Superieure des Sciences Appliquees et de Technologie), Lannion, France.

 
 

C. Kandouci was born in 1960 in Saida, Algeria. He received his BS degree in electrical engineering from the Mechanical Engineering Institute of The University of Sciences and Technology of Oran (USTO) in 1985 and the PhD degree from the polytechnic school of Gdansk, Poland in 1990. Since 1990 he is teaching at The University of sciences and Technology of Oran (USTO), Algeria.